Conductance properties of rough quantum wires with colored surface disorder

Effects of correlated disorder on wave localization have attracted considerable interest. Motivated by the importance of studies of quantum transport in rough nanowires, here we examine how colored surface roughness impacts the conductance of two-dimensional quantum waveguides, using direct scattering calculations based on the reaction matrix approach. The computational results are analyzed in connection with a theoretical relation between the localization length and the structure factor of correlated disorder. We also examine and discuss several cases that have not been treated theoretically or are beyond the validity regime of available theories. Results indicate that conductance properties of quantum wires are controllable via colored surface disorder.Comment: 19 pages, 7 figure

Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.Comment: Review article, to appear in Journal of Computational and Theoretical Nanoscienc

Electron mobility in silicon nanowires

The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 nm to 8 nm, the width range capturing a crossover between two-dimensional (2D) and one-dimensional (1D) electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly

On Landauer vs. Boltzmann and Full Band vs. Effective Mass Evaluation of Thermoelectric Transport Coefficients

The Landauer approach to diffusive transport is mathematically related to the solution of the Boltzmann transport equation, and expressions for the thermoelectric parameters in both formalisms are presented. Quantum mechanical and semiclassical techniques to obtain from a full description of the bandstructure, E(k), the number of conducting channels in the Landauer approach or the transport distribution in the Boltzmann solution are developed and compared. Thermoelectric transport coefficients are evaluated from an atomistic level, full band description of a crystal. Several example calculations for representative bulk materials are presented, and the full band results are related to the more common effective mass formalism. Finally, given a full E(k) for a crystal, a procedure to extract an accurate, effective mass level description is presented.Comment: 33 pages, 8 figure

Identification of new transitions and mass assignments of levels in 143−153^{143-153}Pr

The previously reported levels assigned to 151,152,153Pr have recently been called into question regarding their mass assignment. The above questioned level assignments are clarified by measuring g-transitions tagged with A and Z in an in-beam experiment in addition to the measurements from 252Cf spontaneous fission (SF) and establish new spectroscopic information from $N=84$ to $N=94$ in the Pr isotopic chain. The isotopic chain 143-153Pr has been studied from the spontaneous fission of 252Cf by using Gammasphere and also from the measurement of the prompt g-rays in coincidence with isotopically-identified fission fragments using VAMOS++ and EXOGAM at GANIL. The latter were produced using 238U beams on a 9Be target at energies around the Coulomb barrier. The g-g-g-g data from 252Cf (SF) and those from the GANIL in-beam A- and Z-gated spectra were combined to unambiguously assign the various transitions and levels in 151,152,153Pr and other isotopes. New transitions and bands in 145,147,148,149,150Pr were identified by using g-g-g and g-g-g-g coincidences and A and Z gated g-g spectra. The transitions and levels previously assigned to 151,153Pr have been confirmed by the (A,Z) gated spectra. The transitions previously assigned to 152Pr are now assigned to 151Pr on the basis of the (A,Z) gated spectra. Two new bands with 20 new transitions in 152Pr and one new band with 7 new transitions in 153Pr are identified from the g-g-g-g coincidence spectra and the (A,Z) gated spectrum. In addition, new g-rays are also reported in 143-146Pr. New levels of 145,147-153Pr have been established, reliable mass assignments of the levels in 151,152,153Pr have been reported and new transitions have been identified in 143-146Pr showing the new avenues that are opened by combining the two experimental approaches.Comment: Accepted in Phys. Rev.

Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm

Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions